Deep‐level traps and the conduction‐band structure of InP
作者:
A. Majerfeld,
O. Wada,
A. N. M. M. Choudhury,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 11
页码: 957-959
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90233
出版商: AIP
数据来源: AIP
摘要:
Three traps found inn‐type InP with emission activation energies &Dgr;Ee=0.43, 0.59, and 0.63 eV are analyzed. The position of the energy levels for these traps, relative to the lowest conduction‐band minimum &Ggr;, areET=0.34, 0.20, and 0.24 eV, respectively. It is shown that the 0.43‐eV trap emits to and captures electrons from the &Ggr; minimum and exhibits a thermally activated capture cross section with a barrier energy of 0.09 eV. Very good agreement is found between the capture cross sections derived from capture and from emission experiments: &sgr;∞=3.4×10−15and 5.8×10−15cm2, respectively. It is concluded from detailed emission and capture studies that the 0.59‐ and 0.63‐eV traps emit and capture carriers via the higher‐lyingLminima. A value of 0.39 eV for the intervalleyL‐&Ggr; energy separation is consistent with the observed emission and capture properties of both centers.
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