The electric field and temperature dependence of the quantum gain associated with the internal photoemission of holes from CdS and CdSe into poly(N‐vinyl carbazole), i.e., PVK, are discussed in terms of a simple model of energy‐loss scattering by holes near the PVK surface. Excellent qualitative agreement is obtained between simple analytical expressions derived on the model and data on CdS‐PVK and CdSe‐PVK.