Measurement of boron impurity profiles in Si using glow discharge optical spectroscopy
作者:
J. E. Greene,
F. Sequeda‐Osorio,
B. G. Streetman,
J. R. Noonan,
C. G. Kirkpatrick,
期刊:
Applied Physics Letters
(AIP Available online 1974)
卷期:
Volume 25,
issue 8
页码: 435-438
ISSN:0003-6951
年代: 1974
DOI:10.1063/1.1655538
出版商: AIP
数据来源: AIP
摘要:
Glow discharge optical spectroscopy (GDOS) has been applied to the measurement of impurity profiles in boron‐diffused and ion‐implanted Si samples. The GDOS technique provides a convenient and sensitive probe of boron impurity profiles; results are presented for concentrations below 5×1017cm−3. For a Si sample which has been subjected to a 1‐h constant source boron diffusion at 1100°C, the measured profile exhibited enhanced diffusion effects typical of previously reported results measured by other techniques. Similarly, a sample implanted with 120‐keV B+ions to a fluence of 1014cm−2exhibited a typical boron distribution. The position of the measured peak concentration corresponded well with that predicted by theory, and the implanted distribution exhibited a prominent tail as reported from other measurements.
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