首页   按字顺浏览 期刊浏览 卷期浏览 Circuit switching analysis for optically excited metal-insulator (tunnel)-silicon thyri...
Circuit switching analysis for optically excited metal-insulator (tunnel)-silicon thyristor (MIST)

 

作者: S.Moustakas,   J.M.Dell,   R.B.Calligaro,   A.G.Nassibian,   J.L.Hullett,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  （IET Available online 1981）
卷期: Volume 128, issue 3  

页码: 92-96

 

年代: 1981

 

DOI:10.1049/ip-i-1.1981.0027

 

出版商: IEE

 

数据来源: IET

 

摘要:

A simple equivalent circuit is employed to model the optically induced switching conditions of the MIST, thereby permitting the delay time, rise time and fall time to be calculated. The model also enables easy examination of the dependence of the MIST's transient behaviour to both optical power overdrive and device capacitance and resistance. Experimental verification of the theory is undertaken.

 

点击下载:  PDF (640KB)



返 回