Matrixed field emission devices have been fabricated using a modification of standard integrated circuit fabrication techniques. The emtter‐to‐gate spacing is fixed by the thickness of a deposited oxide and not by photolithograpnic techniques. Functioning triodes have been fabricated using this deposited oxide spacer spproach. Measured emission current to a collector electrically and physically separated from the matrixed emission array follows Fowler‐Nordheim behavior. Modeling of the potential field near the emitter and gate structures as well as the emitted electron trajectories with a two‐dimensional, Poisson solver, finite‐differnce code was used to evaluate and improve field emission structures. © 1995American Institute of Physics