Nitrogen ions (N2+) are implanted intop‐type Si samples to a dose of 6×1014cm−2at 10 keV. When the samples, annealed at temperatures higher than 535°C, are irradiated nonuniformly, photovoltages are observed parallel to the implanted surface. This lateral photovoltaic effect has confirmed that ann‐type layer is formed by nitrogen implantation. The lateral photovoltage is a linear function of the irradiation position. The dependence of the photovoltage on irradiation wavelength (0.70–1.40 &mgr;) and on anneal temperature (up to 850°C) has also been investigated.