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Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silane

 

作者: M. Meunier,   T. R. Gattuso,   D. Adler,   J. S. Haggerty,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 43, issue 3  

页码: 273-275

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94324

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The electronic properties of hydrogenated amorphous silicon (a‐Si:H) produced by laser‐induced chemical vapor deposition of silane are reported. Spin density and both optical gap and hydrogen content increased with decreasing substrate temperature. Electrical conductivities are reported. Film properties are superior to those produced by conventional chemical vapor deposition of silane.

 

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