The structure and electrophysical properties of a silicon layers after P+and Sb+ion implantation and subsequent pulse annealing of millisecond lengths have been investigated by the transmission electron microscopy and four-point probe measurements. It has been demonstrated, that for certain implantation and annealing conditions the epitaxially grown layers can involve the microtwins and dislocation loops. The impurity redistribution under the pulse annealing depends on the implantation dose and rather weaker the light irradiation energy density.