System for reflection electron microscopy and electron diffraction at intermediate energies
作者:
J. M. Cowley,
J. L. Albain,
G. G. Hembree,
P. E. Ho&slash;jlund‐Nielsen,
F. A. Koch,
J. D. Landry,
H. Shuman,
期刊:
Review of Scientific Instruments
(AIP Available online 1975)
卷期:
Volume 46,
issue 7
页码: 826-829
ISSN:0034-6748
年代: 1975
DOI:10.1063/1.1134346
出版商: AIP
数据来源: AIP
摘要:
A system employing medium energy electrons (1–15 keV) for scanning microscopy and diffraction intensity measurements has been constructed. The specimen is situated in an UHV environment and can be cleaned by argon ion sputtering and heated up to 1000 °C. The resolution is currently about 300 A˚ for scanning images formed when secondary electrons are detected. The use of diffracted beams to form images is shown to provide new types of information regarding the structure and defects of crystal surfaces. Intensities and intensity profiles of diffracted beams can be measured for comparison with theoretical data and structure analysis.
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