Oxidation of sputtered molybdenum silicide thin films
作者:
Tomoyasu Inoue,
Katsuo Koike,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 9
页码: 826-827
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90543
出版商: AIP
数据来源: AIP
摘要:
An Auger in‐depth analysis and a 350 keV He+backscattering technique were used to investigate the growth of an SiO2protective layer and the compositional change in sputtered molybdenum silicide films after oxidation, respectively. Silicon depletion and molybdenum pileup in molybdenum silicide were observed near the SiO2/Mo‐Si interface. The film becomes molybdenum rich with increasing oxidation time. The Si/Mo atomic ratio decreases rapidly in the first 30‐min period and then decreases slowly, nearly proportionally to the square root of the oxidation time. These behaviors are explained by the preferential oxidation of silicon and the reduced silicon present at the SiO2/Mo‐Si interface from the rest of the molybdenum silicide layer.
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