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Effects of defects and disorder on channeling radiation

 

作者: V. Hari Kumar,   A. P. Pathak,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1992）
卷期: Volume 286, issue 1  

页码: 255-257

 

ISSN:0094-243X

 

年代: 1992

 

DOI:10.1063/1.44730

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Here we have probed the effects of dislocations on channeling radiation from 56 MeV positrons channeled along ⟨110⟩ axis of a silicon single crystal using shell model axial potential and calculated the fractional increase in radiation frequency due to dislocations.

 

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