The incorporation of Ga during LPE growth of In0.53Ga0.47As on (111)Band (100) InP substrates
作者:
G. A. Antypas,
Y. M. Houng,
S. B. Hyder,
J. S. Escher,
P. E. Gregory,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 5
页码: 463-465
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90380
出版商: AIP
数据来源: AIP
摘要:
We report the temperature dependence of the incorporation of Ga during LPE growth of In0.53Ga0.47As on (111)B‐ and (100) ‐oriented InP substrates. The distribution coefficients of Ga can be accurately represented byKGa(111)B=6.40×10−6 exp(1.10/kT) andKGa(100)=5.02×10−13 exp(2.37/kT), which are equal at 629 °C. The difference in activation energies is the source of the ’’discrepancy’’ reported by Pearsalletal. thatKGa(111)B<KGa(100)at 621 °C while from our resultsKGa(111)B≳KGa(100)at 650 °C.
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