Silicon molecular beam epitaxy on gallium phosphide
作者:
T. de Jong,
W. A. S. Douma,
J. F. van der Veen,
F. W. Saris,
J. Haisma,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 12
页码: 1037-1039
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.93834
出版商: AIP
数据来源: AIP
摘要:
Si overlayers have been grown under ultrahigh vacuum conditions on GaP(100) single crystals by means of molecular beam epitaxy. For growth temperatures of 300 °C and higher (2×1) low‐energy electron diffraction patterns of the Si overlayers were seen at all overlayer thicknesses produced (8–10 000 A˚). By means of Auger electron spectroscopy segregation of P and Ga on top of the grown Si surface was measured. With Rutherford backscattering using ion channeling we found Si minimum channeling yields of 3% in the GaP:Si(100) heterostructures, which corresponds well to the yield of pure monocrystalline (100) Si. Two methods are described to eliminate the Ga and P segregation.
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