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A new method for the determination of the interface‐state density in the presence of statistical fluctuations of the surface potential

 

作者: G. Baccarani,   M. Severi,   G. Soncini,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 23, issue 5  

页码: 265-267

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654883

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new method for the analysis of the high‐ and low‐frequency MOSC&sngbnd;Vcharacteristics is proposed to determine the interface‐state density in the presence of statistical fluctuations of the surface potential. This method provides simultaneously the mean oxide charge and the variance of its Gaussian distribution.

 

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