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Injection luminescence and laser action in epitaxial PbTe diodes

 

作者: H. Holloway,   W.H. Weber,   E.M. Logothetis,   A.J. Varga,   K.F. Yeung,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 21, issue 1  

页码: 5-6

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654213

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thin‐film diode lasers have been made from Schottky barriers on epitaxial PbTe. At 77 °K the spontaneous emission spectrum agrees with that calculated for direct band‐to‐band transitions. At 12 °K laser action is observed in the pulsed mode with an average current density, at threshold, of (2–3) × 102A cm−2. This is the first observation of diode laser action from evaporated thin films of any semiconductor.

 

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