New Si planar junction diodes with uniform avalanche multiplication
作者:
K. Nishida,
T. Takekawa,
M. Nakajima,
期刊:
Applied Physics Letters
(AIP Available online 1974)
卷期:
Volume 25,
issue 11
页码: 669-670
ISSN:0003-6951
年代: 1974
DOI:10.1063/1.1655354
出版商: AIP
数据来源: AIP
摘要:
Si planar diodes were obtained with a steep and deep junction except for the lateral edges. This structure was made by a single diffusion of Ga through an opening of the SiO2&sngbnd;Si3N4mask. New planar diodes with unique guard rings have exhibited uniform avalanche multiplication in the broad areas, overcoming the edge breakdown. These devices are shown to be useful as avalanche photodiodes.
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