Secondary dislocation climb during optical excitation of GaAs laser material
作者:
G. R. Woolhouse,
B. Monemar,
C. M. Serrano,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 1
页码: 94-97
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90159
出版商: AIP
数据来源: AIP
摘要:
Dislocation glide and climb during optical excitation of GaAs laser material have been studied. A dislocation which has been induced to glide under high excitation can be induced to climb by reducing the incident excitation. The climb proceeds in a distinctly different crystallographic direction to, and at a rate which is five or six orders of magnitude slower than, the glide. Furthermore, only the threading portion of the dislocation experiences climb, a misfit dislocation excited at the same external intensity for the same time undergoes no discernible growth. Transmission electron microscopy examination of the climb region shows that it consists of a highly convoluted giant dislocation dipole. The nature of this giant dipole has been determined by a calibrated technique and it has been shown to grow by vacancy climb. Small coherent precipitate particles have been identified for the first time in the neighborhood of the giant dipole.
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