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Self‐interstitial and vacancy contributions to silicon self‐diffusion determined from the diffusion of gold in silicon

 

作者: F. Morehead,   N. A. Stolwijk,   W. Meyberg,   U. Go¨sele,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 8  

页码: 690-692

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94074

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We present an analysis of gold diffusion profiles in silicon taking into account that both self‐interstitials and vacancies are present at thermal equilibrium. We find that at 1000 °C the contribution of self‐interstitials to silicon self‐diffusion is about equal to that of vacancies.

 

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