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High quality polysilicon by amorphous low pressure chemical vapor deposition

 

作者: G. Harbeke,   L. Krausbauer,   E. F. Steigmeier,   A. E. Widmer,   H. F. Kappert,   G. Neugebauer,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 3  

页码: 249-251

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.93904

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Undoped andinsituphosphorus‐doped low pressure chemical vapor deposited polysilicon films have been studied by various structural analysis and optical techniques as a function of deposition temperature. Polysilicon films of high quality can only be obtained by deposition in the amorphous phase and subsequent crystallization.

 

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