Strongly bound chemisorption state for benzene on silicon (111)
作者:
M. N. Piancastelli,
F. Cerrina,
G. Margaritondo,
A. Franciosi,
J. H. Weaver,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 11
页码: 990-991
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.93825
出版商: AIP
数据来源: AIP
摘要:
Dramatic differences were observed between the room‐temperature reactivity of benzene on cleaved Si and on cleaved Ge and GaAs with synchrotron‐radiation photoemission. No evidence of benzene adsorption was observed on Ge or GaAs. On Si we unexpectedly observed a strongly bound state, probably due to the formation of phenylic‐like C–Si bonds.
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