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Strongly bound chemisorption state for benzene on silicon (111)

 

作者: M. N. Piancastelli,   F. Cerrina,   G. Margaritondo,   A. Franciosi,   J. H. Weaver,  

 

期刊: Applied Physics Letters  (AIP Available online 1983)
卷期: Volume 42, issue 11  

页码: 990-991

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.93825

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Dramatic differences were observed between the room‐temperature reactivity of benzene on cleaved Si and on cleaved Ge and GaAs with synchrotron‐radiation photoemission. No evidence of benzene adsorption was observed on Ge or GaAs. On Si we unexpectedly observed a strongly bound state, probably due to the formation of phenylic‐like C–Si bonds.

 

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