Data are presented on liquid‐phase epitaxial (LPE) GaxIn1−xPyAs1−yin the composition range (0.5<y<0.9) grown on InP substrates which indicate the nature of the compositional dependence of As and Ga distribution coefficients. The distribution coefficient functions when extrapolated to lattice‐matched compositional limits (y=0,1) are consistent with published data on those limits.