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Accumulation mode Ga0.47In0.53As insulated gate field‐effect transistors

 

作者: H. H. Wieder,   J. L. Veteran,   A. R. Clawson,   D. P. Mullin,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 43, issue 3  

页码: 287-289

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94329

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Preliminary results obtained on enhancement‐type insulated gate field‐effect transistors are described. These are based on the surface accumulation of heteroepitaxially grown Ga0.47In0.53As layers whose residual donor impurities are compensated by deep level Fe acceptors.

 

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