ELECTRON BEAM CHANNELING IN SINGLE‐CRYSTAL SILICON BY SCANNING ELECTRON MICROSCOPY
作者:
E. D. Wolf,
T. E. Everhart,
期刊:
Applied Physics Letters
(AIP Available online 1969)
卷期:
Volume 14,
issue 10
页码: 299-300
ISSN:0003-6951
年代: 1969
DOI:10.1063/1.1652657
出版商: AIP
数据来源: AIP
摘要:
An annular semiconductor diode detector was used in a Cambridge Stereoscan electron microscope to resolve beam‐orientation‐dependent backscattered electron images not only as bands but also as extremely complicated defect and excess line patterns with angular resolution ≤ 5 × 10−4rad. The resultant patterns are similar in appearance to transmission and reflection Kikuchi electron diffraction patterns.
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