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ELECTRON BEAM CHANNELING IN SINGLE‐CRYSTAL SILICON BY SCANNING ELECTRON MICROSCOPY

 

作者: E. D. Wolf,   T. E. Everhart,  

 

期刊: Applied Physics Letters  (AIP Available online 1969)
卷期: Volume 14, issue 10  

页码: 299-300

 

ISSN:0003-6951

 

年代: 1969

 

DOI:10.1063/1.1652657

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An annular semiconductor diode detector was used in a Cambridge Stereoscan electron microscope to resolve beam‐orientation‐dependent backscattered electron images not only as bands but also as extremely complicated defect and excess line patterns with angular resolution ≤ 5 × 10−4rad. The resultant patterns are similar in appearance to transmission and reflection Kikuchi electron diffraction patterns.

 

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