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A single flux quantum Josephson junction memory cell

 

作者: H. H. Zappe,  

 

期刊: Applied Physics Letters  （AIP Available online 1974）
卷期: Volume 25, issue 7  

页码: 424-426

 

ISSN:0003-6951

 

年代: 1974

 

DOI:10.1063/1.1655534

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Operation of a DRO single flux quantum Josephson junction memory cell is described. Writing and sensing is performed with coincident currents. The device acts as its own sense detector, switching to the gap voltage if a flux quantum was stored. Dense arrays not requiring standby power are potentially feasible.

 

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