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Effect of Boron Doping in Bi‐based 2223 Superconductors

 

作者: M. Chandra Sekhar,   B. Gopalakrishna,   M. M. Kumar,   S. V. Suryanarayana,  

 

期刊: Crystal Research and Technology  (WILEY Available online 1995)
卷期: Volume 30, issue 3  

页码: 345-352

 

ISSN:0232-1300

 

年代: 1995

 

DOI:10.1002/crat.2170300312

 

出版商: WILEY‐VCH Verlag

 

数据来源: WILEY

 

摘要:

AbstractSamples with the stoichiometric composition Bi2−xPbxSr2Ca2Cu3−yByOz(x= 0.3,y= 0.2, 0.25, 0.3, 0.4) ceramics were prepared by a solid state reaction method. The samples were annealed at 850 °C for 100 hours (treatment A), and the other at 850 °C for 200 hours (treatment B). From the X‐ray diffraction data of a ceramic sample it is revealed that all the samples were mixed phases of 2212 and 2223. The variation of the lattice parameters with the dopant level are represented. From the D.C. four‐probe electrical resistivity data it was found that for the samples subjected to treatment B theTc(0) values were higher than those with treatment A. The A.C. susceptibility data were collected by change in the inductance method. The effect of boron doping on the phase formation andTc(0) is presented and the volume fraction of the phases estimated from the X‐ray data. The presence of boron in the samples was confirmed by the inductive coupled plasma method. The microstructure of the samples was studied by scanning electron

 

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