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Rapid temperature variation of hopping conduction in GaAs low‐temperature bolometers

 

作者: J. K. Wigmore,   B. Tlhabologang,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 8  

页码: 685-687

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94072

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The very rapid temperature dependence between 1 and 4 K of the resistivity of GaAs bolometers was found to follow &rgr;∼exp(AT−1/4). The most plausible attribution of this behavior was to variable range, single particle, hopping, and our data were consistent with the model of Apsley and Hughes.

 

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