Amorphous-silicon m.i.s. solar cells
作者:
J.I.B.Wilson,
J.McGill,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1978)
卷期:
Volume 2,
issue 3S
页码: 7-10
年代: 1978
DOI:10.1049/ij-ssed.1978.0027
出版商: IEE
数据来源: IET
摘要:
M.I.S. solar cells of amorphous silicon on stainless steel, with a top barrier contact of Ni/TiOx, have given 4.8% power conversion efficiency without an antireflection coating. The insulating layer, with an optimum thickness of ≈ 2nm, compensates for the low work function of nickel compared with platinum, and enables similar high open-circuit voltages (up to 680 mV) to be obtained. The fill factor is not appreciably degraded by the addition of an insulating layer, unless this is thicker than = 3 nm. Under illumination, the diode characteristics change compared with their behaviour in the dark; the diode factor, the barrier height, and the series resistance are all dependent on light intensity.
点击下载:
PDF
(492KB)
返 回