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Energy ordering of the excited states of XeF

 

作者: D. Kligler,   H. H. Nakano,   D. L. Huestis,   W. K. Bischel,   R. M. Hill,   C. K. Rhodes,  

 

期刊: Applied Physics Letters  (AIP Available online 1978)
卷期: Volume 33, issue 1  

页码: 39-41

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90183

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ar/Xe/NF3mixtures were excited by the focused beam from an ArF (193 nm) laser. Xe+ions are produced by two‐photon ionization, the electrons attach to make F−, and the ions recombine to make XeF*. Radiation is observed in the XeF(B 1/2) →XeF(X1/2) bands near 351 nm and in the broader XeF(C3/2) →XeF(A3/2) band near 460 nm. At low background gas pressure, mostlyB‐Xuv emission is observed. As the argon pressure is increased to 1000 Torr, the visible/uv band intensity ratio increases to about 3 to 1. We conclude from these results that theC(3/2) state lies 700±70 cm−1below theB(1/2) state. This conclusion should have a significant impact on our understanding of the fluorescence yields and laser performance of e‐beam‐excited XeF.

 

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