Secondary ion mass spectrometry (SIMS) is used to study the gettering of chromium from silicon during solid source phosphorus diffusion. Low dose ion implants are used to introduce chromium into the silicon. SIMS depth profiles from the as‐implanted and the phosphorus‐diffused materials show that the majority of chromium is removed from the silicon during the diffusion of phosphorus to form thep‐njunction. Annealing times of 1 and 5 minutes are shown to be as effective as annealing times of 30 minutes for the removal of the implanted Cr.