The electrochemical etching ofp‐CdTe is investigated. This etching is based on a method used previously for the selective etching ofn‐type Cd‐chalcogenide semiconductors. We show that the electrochemical etching creates a dense pattern of submicron pits, and increases the reverse bias photocurrent of a Schottky barrier device, made up of single crystalp‐CdTe and a polysulfide electrolyte typically by 20%. Evidence for the selective removal of surface defects is brought up and the conditions for selective etching are discussed in brief.