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Sputtering yields and Specific energy losses of Ar+Ions with energies from 5 TO 30 KeV AT SiO2

 

作者: H. Bach,   I. Kitzman,   H. Schröder,  

 

期刊: Radiation Effects  （Taylor Available online 1974）
卷期: Volume 21, issue 1  

页码: 31-36

 

ISSN:0033-7579

 

年代: 1974

 

DOI:10.1080/10420157408230809

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Sputtering yields are determined from interference micrographs of the etched pits developing during ablation of discharged silica surfaces by a homogeneous Ar ion beam at normal incidence. The maximum of the sputtering yield was found to be 1.8 atoms per incident ion at about 20 keV.

 

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