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Thermally Induced Negative Resistance in Si‐Doped YIG

 

作者: Theodore Kaplan,   D. C. Bullock,   David Adler,   D. J. Epstein,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 20, issue 11  

页码: 439-441

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654007

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A thermal model is presented to explain the recently observed current‐controlled negative resistance in single crystals of Si‐doped YIG. Steady‐stateI‐Vcharacteristics are calculated from electrical and thermal conductivity data and are compared with the observed curve. The agreement between theory and experiment is excellent.

 

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