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Influence of implantation temperature and surface protection on tellurium implantation in GaAs

 

作者: J.S. Harris,   F.H. Eisen,   B. Welch,   J.D. Haskell,   R.D. Pashley,   J.W. Mayer,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 21, issue 12  

页码: 601-603

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654271

 

出版商: AIP

 

数据来源: AIP

 

摘要:

GaAs samples were implanted with tellurium at room temperature or at 150 °C and annealed to 750 °C with an SiO2or Si3N4protective layer. The highest electron concentrations and brightest photoluminescence were obtained for the hot implants with a Si3N4protective layer.

 

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