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Picosecond AlxGa1−xAs modulation‐doped optical field‐effect transistor sampling gate

 

作者: C. G. Bethea,   C. Y. Chen,   A. Y. Cho,   P. A. Garbinski,   B. F. Levine,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 8  

页码: 682-684

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94071

 

出版商: AIP

 

数据来源: AIP

 

摘要:

New modulation‐doped AlxGa1−xAs/GaAs metal‐semiconductor field‐effect photodetectors have been fabricated and tested in a novel picosecond optical sampling gate configuration. The rise time was measured to be 12 ps, with a full width at half‐maximum of 27 ps. The optical electronic picosecond cross‐correlation measurement has shown the importance of the two‐dimensional electron gas for high‐speed operation.

 

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