首页   按字顺浏览 期刊浏览 卷期浏览 High‐efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wa...
High‐efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 &mgr;m

 

作者: M. A. Washington,   R. E. Nahory,   M. A. Pollack,   E. D. Beebe,  

 

期刊: Applied Physics Letters  (AIP Available online 1978)
卷期: Volume 33, issue 10  

页码: 854-856

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90212

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report In1−xGaxAsyP1−y/InP photodiode detectors with external quantum efficiencies of 50–70% without antireflection coating. The short‐ and long‐wavelength response limits of these very efficient detectors can be compositionally tuned to lie anywhere in the wavelength range 0.9<&lgr;<1.7 &mgr;m.

 

点击下载:  PDF (230KB)



返 回