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Single Crystal 6H-SiC(0001) by AES

 

作者: Michael J. Bozack,  

 

期刊: Surface Science Spectra  （AIP Available online 1994）
卷期: Volume 3, issue 1  

页码: 86-90

 

ISSN:1055-5269

 

年代: 1994

 

DOI:10.1116/1.1247768

 

出版商: American Vacuum Society

 

关键词: SILICON CARBIDES;MONOCRYSTALS;AES;WAFERS;N−TYPE CONDUCTORS

 

数据来源: AIP

 

摘要:

We report Auger spectra for the Si-terminated face of single crystal 6H-SiC(0001). The specimen was cut from a commercial (CREE Research) 1-in.,n-doped wafer. SiC has recently attracted attention in semiconductor applications, and provides an attractive choice of material for devices operating at high temperature, high frequency, and high power. A companion submission shows XPS spectra.

 

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