A contactless measurement technique for electrical depth profiling of very shallowp‐njunctions using a scanning Auger microscope is presented. The physical principle is the detection of variations in internal potential via shifts in the Auger peaks. Depth profiling of shallow junctions is realized by ion milling. Deep junctions are more rapidly analyzed via bevelling. For ap‐njunction of classical depth (3500 A˚), Auger voltage contrast depth profiling is compared with spreading resistance measurements and shown to be an accurate and sensitive means of detecting low concentrations of electrically active impurities (in the 1015cm−3range). The main advantage of the method is excellent depth resolution when using ion milling. This is demonstrated for a very shallowp‐njunction (400 A˚).