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Crystalline defects in solid phase epitaxy Si films deposited at elevated temperatures

 

作者: A. Christou,   J. E. Davey,   W. Tseng,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 10  

页码: 683-685

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.89856

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Si layers deposited on Au‐Si substrates at temperatures above 380 °C are epitaxial with the underlying Si substrate. The layers analyzed contain a high density of microtwins which is the main factor resulting in dechanneling in the aligned RBS spectrum. The deposited layers also contain stacking faults and residual Au inclusions adjacent to primary twins.

 

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