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Significance of the channeling surface peak in thin‐film analysis

 

作者: Robert L. Kauffman,   L. C. Feldman,   P. J. Silverman,   R. A. Zuhr,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 2  

页码: 93-94

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.89948

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The surface scattering of MeV He+ions channeled along Si⟨100⟩ from clean well‐characterized Si(100) surfaces is measured. The surface peak intensity, along with other values in the literature, is shown to obey simple scaling laws. For the study of very thin films by backscattering the contribution made by this surface scattering can be important.

 

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