The formation of oxidation‐induced stacking faults in the surface regions of silicon wafers can be eliminated by a short‐period anneal in a dry nitrogen atmosphere containing small concentrations of HCl and oxygen in the same furnace where subsequent oxidation will be carried out. This preoxidation anneal results in the prevention of fault nucleation without causing any problem like a nitridation reaction, an etch‐pit formation, and a blotchy appearance on the silicon surface.