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Diffusion of arsenic in silicon: Validity of the percolation model

 

作者: D. Mathiot,   J. C. Pfister,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 12  

页码: 1043-1044

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.93836

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is shown that the percolation model previously proposed to explain the high concentration diffusion of phosphorus in Si holds also in the case of arsenic. Suitable numerical values of the parameters are derived, and it is shown that the model allows the simulation of arsenic diffusion in a wide range of experimental conditions.

 

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