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Field-effect transistor sensitive to dipolar molecules

 

作者: Gary F. Blackburn,   Max Levy,   Jirˇi´ Janata,  

 

期刊: Applied Physics Letters  (AIP Available online 1983)
卷期: Volume 43, issue 7  

页码: 700-701

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94536

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A field-effect transistor with metal gate suspended above the gate insulator has been fabricated. Fluid samples can freely penetrate into the gap formed between the metal and the insulator. If the molecules carry an electrical dipole, they will alter the surface potential on these two materials giving rise to a change in the drain current of the transistor. Our preliminary results confirm this mechanism for dipolar molecules such as methanol and methylene chloride.

 

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