Grain size dependence in a self‐implanted silicon layer on laser irradiation energy density
作者:
W. F. Tseng,
J. W. Mayer,
S. U. Campisano,
G. Foti,
E. Rimini,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 32,
issue 12
页码: 824-826
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.89938
出版商: AIP
数据来源: AIP
摘要:
The transformation of amorphous Si layers to polycrystalline material induced byQ‐switched ruby laser single pulses of 20 and 50 nsec duration has been investigated. The analysis has been performed by transmission electron microscopy and by channeling measurements using 2.0‐MeV He+Rutherford backscattering. The average grain size of the polycrystalline layers increases with the incident energy density of the laser pulse in the range 0.6–1.7 J/cm2. A transition to single‐crystal layers is found for incident energy densities around 2.0 J/cm2. The grain size correlates with incident energy density (J/cm2) rather than incident power density (MW/cm2) for these pulse durations.
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