Light‐emitting InP diodes were made by liquid‐phase epitaxy. The most efficient diodes result when then‐type layers are grown from a Sn‐doped melt, while thep‐type layers are grown from the same melt, but overcompensated with Zn. External quantum efficiencies up to 0.75% at room temperature and 11.7% at 77°K were observed in uncoated diodes. Threshold current densities for stimulated emission were as low as 750 A/cm2at 77°K. Spontaneous emission can be observed normal to thep‐njunction.