Microwave Hall measurment techniques on low mobility semiconductors and insulators. I. Analysis
作者:
Mohamed M. Sayed,
Charles R. Westgate,
期刊:
Review of Scientific Instruments
(AIP Available online 1975)
卷期:
Volume 46,
issue 8
页码: 1074-1079
ISSN:0034-6748
年代: 1975
DOI:10.1063/1.1134404
出版商: AIP
数据来源: AIP
摘要:
The relationships of microwave Hall mobilities and microwave conductivities in a semiconductor, placed at the center of a dual mode TE111cavity, are expressed in terms of the loaded and unloaded voltage reflection coefficients, the sample and the cavity dimensions, the ratio of the output power to the input power of the cavity, and the magnetic field. Scattering
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