Use of an Ion Microprobe in Semiconductor Failure Analysis
作者:
R. M. Gerber,
J. W. Dzimianski,
期刊:
Journal of Vacuum Science and Technology
(AIP Available online 1973)
卷期:
Volume 10,
issue 6
页码: 1072-1073
ISSN:0022-5355
年代: 1973
DOI:10.1116/1.1318470
出版商: American Vacuum Society
数据来源: AIP
摘要:
Causes of high-ohmic contact resistance were explored by analyzing several integrated circuit samples with an ion microprobe. Presence of oxide and dopant depletion at the interface were indicated. Mapping of oxygen vs depth through an oxide revealed that not only the elements present, but also the layered structure of the material could be observed. The possible production of artifacts due to electrostatic charges on the surfaces of a sample was noted.
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