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Time‐resolved temperature measurement of picosecond laser irradiated silicon

 

作者: L. A. Lompre´,   J. M. Liu,   H. Kurz,   N. Bloembergen,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 43, issue 2  

页码: 168-170

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94268

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Time‐resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface layer of 100‐nm thickness.

 

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