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Room‐temperature operation of distributed‐Bragg‐confinement Ga1−xAlxAs‐GaAs lasers grown by metalorganic chemical vapor deposition

 

作者: R. D. Dupuis,   P. D. Dapkus,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 1  

页码: 68-69

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90147

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Room‐temperature operation of new type of Ga1−xAlxAs‐GaAs laser employing distributed Bragg reflectors for optical and carrier confinement has been demonstrated. These distributed‐Bragg‐confinement lasers are grown by metalorganic chemical vapor deposition and exhibit low‐threshold current densities and small angular beam divergence.

 

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