Lasing Transitions inp+‐n‐n+(AlGa) As&sngbnd;Ga As Heterojunction Lasers
作者:
H. Kressel,
H. F. Lockwood,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 20,
issue 4
页码: 175-177
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654098
出版商: AIP
数据来源: AIP
摘要:
A study of the lasing and spontaneous emission fromp+‐n‐n+heterojunction lasers with lightly dopedn‐type active regions shows that the stimulated emission is not due to a simple band‐to‐band recombination process. It is further shown that the 300 K gain coefficient dependence on the junction current differs greatly from that predicted on the basis of band‐to‐band lasing involving a parabolic density‐of‐states distribution.
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