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Lasing Transitions inp+‐n‐n+(AlGa) As&sngbnd;Ga As Heterojunction Lasers

 

作者: H. Kressel,   H. F. Lockwood,  

 

期刊: Applied Physics Letters  (AIP Available online 1972)
卷期: Volume 20, issue 4  

页码: 175-177

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654098

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A study of the lasing and spontaneous emission fromp+‐n‐n+heterojunction lasers with lightly dopedn‐type active regions shows that the stimulated emission is not due to a simple band‐to‐band recombination process. It is further shown that the 300 K gain coefficient dependence on the junction current differs greatly from that predicted on the basis of band‐to‐band lasing involving a parabolic density‐of‐states distribution.

 

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