Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition
作者:
M. A. Khan,
R. A. Skogman,
R. G. Schulze,
M. Gershenzon,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 5
页码: 430-432
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.93953
出版商: AIP
数据来源: AIP
摘要:
High quality single crystal GaN films with extremely uniform thicknesses have been grown in low pressure metalorganic chemical vapor deposition system using the reaction of (C2H5)3Ga with NH3. Electrical and optical properties of the layers were measured. Schottky barriers were fabricated after compensating the background donor concentration (typicallyND∼1×1019cm−3) with Be+or N+implants. These Schottky barriers were electrically and optically characterized.
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